Thin film thickness measurements using Scanning White Light Interferometry
Identifieur interne : 000011 ( Main/Repository ); précédent : 000010; suivant : 000012Thin film thickness measurements using Scanning White Light Interferometry
Auteurs : RBID : Pascal:14-0084388Descripteurs français
- Pascal (Inist)
- Couche mince, Epaisseur couche, Mesure épaisseur, Interférométrie, Rugosité, Image tridimensionnelle, Couche mince transparente, Revêtement optique, Revêtement semiconducteur, Dispositif affichage, Dispositif semiconducteur, Dispositif photovoltaïque, Nitrure, Carbone, Oxyde d'indium, Oxyde d'étain, Ellipsométrie spectroscopique, Métrologie, Nb2O5, ZrO2, 6855J, 4279W, 8460J, 0760F.
- Wicri :
- concept : Carbone, Métrologie.
English descriptors
- KwdEn :
- Carbon, Display devices, Indium oxide, Interferometry, Layer thickness, Metrology, Nitrides, Optical coatings, Photovoltaic cell, Roughness, Semiconductor coating, Semiconductor devices, Spectroscopic ellipsometry, Thickness measurement, Thin films, Tin oxide, Transparent thin film, Tridimensional image.
Abstract
Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb2O5 and ZrO2), a metal-nitride (SiNx:H), a carbon-nitride (SiCxNy:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thin film thickness measurements using Scanning White Light Interferometry</title><author><name sortKey="Maniscalco, B" uniqKey="Maniscalco B">B. Maniscalco</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University</s1><s2>Leicestershire LE11 3TU</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Leicestershire LE11 3TU</wicri:noRegion></affiliation></author><author><name sortKey="Kaminski, P M" uniqKey="Kaminski P">P. M. Kaminski</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University</s1><s2>Leicestershire LE11 3TU</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Leicestershire LE11 3TU</wicri:noRegion></affiliation></author><author><name sortKey="Walls, J M" uniqKey="Walls J">J. M. Walls</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University</s1><s2>Leicestershire LE11 3TU</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Royaume-Uni</country><wicri:noRegion>Leicestershire LE11 3TU</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0084388</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0084388 INIST</idno><idno type="RBID">Pascal:14-0084388</idno><idno type="wicri:Area/Main/Corpus">000093</idno><idno type="wicri:Area/Main/Repository">000011</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carbon</term><term>Display devices</term><term>Indium oxide</term><term>Interferometry</term><term>Layer thickness</term><term>Metrology</term><term>Nitrides</term><term>Optical coatings</term><term>Photovoltaic cell</term><term>Roughness</term><term>Semiconductor coating</term><term>Semiconductor devices</term><term>Spectroscopic ellipsometry</term><term>Thickness measurement</term><term>Thin films</term><term>Tin oxide</term><term>Transparent thin film</term><term>Tridimensional image</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term><term>Epaisseur couche</term><term>Mesure épaisseur</term><term>Interférométrie</term><term>Rugosité</term><term>Image tridimensionnelle</term><term>Couche mince transparente</term><term>Revêtement optique</term><term>Revêtement semiconducteur</term><term>Dispositif affichage</term><term>Dispositif semiconducteur</term><term>Dispositif photovoltaïque</term><term>Nitrure</term><term>Carbone</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Ellipsométrie spectroscopique</term><term>Métrologie</term><term>Nb2O5</term><term>ZrO2</term><term>6855J</term><term>4279W</term><term>8460J</term><term>0760F</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Carbone</term><term>Métrologie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb<sub>2</sub>O<sub>5</sub> and ZrO<sub>2</sub>), a metal-nitride (SiN<sub>x</sub>:H), a carbon-nitride (SiC<sub>x</sub>Ny:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>550</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Thin film thickness measurements using Scanning White Light Interferometry</s1></fA08><fA11 i1="01" i2="1"><s1>MANISCALCO (B.)</s1></fA11><fA11 i1="02" i2="1"><s1>KAMINSKI (P. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>WALLS (J. M.)</s1></fA11><fA14 i1="01"><s1>Centre for Renewable Energy Systems Technology, (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University</s1><s2>Leicestershire LE11 3TU</s2><s3>GBR</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>10-16</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000505786170020</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0084388</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb<sub>2</sub>O<sub>5</sub> and ZrO<sub>2</sub>), a metal-nitride (SiN<sub>x</sub>:H), a carbon-nitride (SiC<sub>x</sub>Ny:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. 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